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  • The effects of non-normality and nonlinearity of the NavierStokes operator on the dynamics of a large laminar separation bubble

    Posted on January 6th, 2010 admin No comments

    S. Cherubini, J.-Ch. Robinet, and P. De Palma<br/> The effects of non-normality and nonlinearity of the two-dimensional NavierStokes differential operator on the dynamics of a large laminar separation bubble over a flat plate have been studied in both subcritical and slightly supercritical conditions. The global eigenvalue analysis and direct numeri … [Phys. Fluids 22, 014102 (2010)] published Tue Jan 5, 2010.

  • Space charge effects in field emission: One dimensional theory

    Posted on January 6th, 2010 admin No comments

    A. Rokhlenko, K. L. Jensen, and J. L. Lebowitz<br/> The current associated with field emission is greatly dependent on the electric field at the emitting electrode. This field is a combination of the electric field in vacuum and the space charge created by the current. The latter becomes more important as the current density increases. Here, a study … [J. Appl. Phys. 107, 014904 (2010)] published Tue Jan 5, 2010.

  • Characterization upon potential properties of HfO stabilized by YO films as cubic phase

    Posted on January 6th, 2010 admin No comments

    Lei Shi, Yue Zhou, Jiang Yin, and Zhiguo Liu<br/> In this article, we have experimentally investigated the nanometer thick cubic HfO stabilized with 6 mol % YO (YSH) films deposited by pulsed laser deposition method in detail. Except the excellent dielectric properties, including a significant increase in dielectric constant as high as 27.2, a nega … [J. Appl. Phys. 107, 014104 (2010)] published Tue Jan 5, 2010.

  • A novel method to form conducting channels in SiO(Si) films for field emission application

    Posted on January 6th, 2010 admin No comments

    M. Semenenko, A. Evtukh, O. Yilmazoglu, H. L. Hartnagel, and D. Pavlidis<br/> The electrical and field emission properties of SiO(Si) films are studied. SiO(Si) films of 40100 nm thick are obtained by plasma-enhanced chemical vapor deposition and thermal evaporation of Si powder onto Si substrates. Nanosized electrical conducting channels are formed in SiO(Si) films by elect … [J. Appl. Phys. 107, 013702 (2010)] published Tue Jan 5, 2010.

  • Magnetic instability of MgB thin film triggered by the various sweeping rates of an applied magnetic field

    Posted on January 6th, 2010 admin No comments

    Jae-Yeap Lee, Hu-Jong Lee, Myung-Hwa Jung, Sung-Ik Lee, Eun-Mi Choi et al.<br/> Up to now, the vortex avalanche is known to depend critically on the changing of some external parameters, such as the applied magnetic field, the temperature, and the demagnetization factor. In this study, we found the sweeping rate (SR) of the applied magnetic field to be another parameter that co … [J. Appl. Phys. 107, 013902 (2010)] published Tue Jan 5, 2010.

  • Effects of applied electric field and hydrostatic pressure on donor impurity states in cylindrical GaN/AlN quantum dot

    Posted on January 6th, 2010 admin No comments

    Congxin Xia, Zaiping Zeng, and Shuyi Wei<br/> Based on the effective-mass approximation and variational procedure, the donor impurity states in the cylindrical zinc-blende GaN/AlN quantum dot (QD) are investigated, considering the influence of the applied electric field and hydrostatic pressure along the growth direction. Numerical results show … [J. Appl. Phys. 107, 014305 (2010)] published Tue Jan 5, 2010.

  • Magnetic properties of graded A1/L1 films obtained by heat treatment of FePt/CoPt multilayers

    Posted on January 6th, 2010 admin No comments

    V. Alexandrakis, D. Niarchos, K. Mergia, Jehyun Lee, J. Fidler et al.<br/> Structurally gradient layered A1/L1 films are obtained by heat treatment of magnetron sputter deposited FePt(20 nm)/CoPt(x nm) bilayers where x=0120 nm. The magnetic properties can be tuned by adjustment of the layer thicknesses and taking advantage of the different heat-treatment temperatures requ … [J. Appl. Phys. 107, 013903 (2010)] published Tue Jan 5, 2010.

  • Elastic anomalies due to structural phase transitions in mechanoluminescent SrAlO:Eu

    Posted on January 6th, 2010 admin No comments

    M. A. Carpenter, C. J. Howard, M. J. Andrew, R. E. A. McKnight, Y. Liu et al.<br/> Elastic and anelastic properties of a ceramic sample of elasticoluminescent SrAlO:Eu have been characterized as a function of temperature by resonant ultrasound spectroscopy. Both the bulk (K) and shear (G) moduli show changes attributable to the influence of the P622–>P6 (sqrt(3)A)–>P2 sequence o … [J. Appl. Phys. 107, 013505 (2010)] published Tue Jan 5, 2010.

  • Emittance of a field emission electron source

    Posted on January 6th, 2010 admin No comments

    K. L. Jensen, P. G. O’Shea, D. W. Feldman, and J. L. Shaw<br/> An analytical formula of the emittance of a field emitter is given. In contrast to thermal and photoemission, such a formula contains complexity due to the multidimensional nature of the source. A formulation of emittance is given for one- and three-dimensional (3D) field emitters. The 3D formulatio … [J. Appl. Phys. 107, 014903 (2010)] published Tue Jan 5, 2010.

  • Electronic Raman scattering in the laser-etched silicon nanostructures

    Posted on January 6th, 2010 admin No comments

    A. K. Shukla, Rajesh Kumar, and Vivek Kumar<br/> Electronic Raman scattering is observed here in the silicon nanostructures. Observation of electronic Raman scattering in low dimensional silicon is possible due to coupling of Raman active phonons with photoexcited electrons found in the electronic states, which are available as a result of quantum … [J. Appl. Phys. 107, 014306 (2010)] published Tue Jan 5, 2010.