High-mobility enhancement-mode 4H-SiC lateral field-effect transistors utilizing atomic layer deposited AlO gate dielectric

Daniel J. Lichtenwalner, Veena Misra, Sarit Dhar, Sei-Hyung Ryu, and Anant Agarwal<br/> Lateral metal-oxide-semiconductor field-effect transistors (MOSFETs) have been fabricated on 4H-SiC utilizing deposited dielectrics and gate-last processing. The bilayer dielectric consists of thin nitrided SiO covered by 25 nm of AlO deposited using atomic layer deposition. Field-effect mobility an … [Appl. Phys. Lett. 95, 152113 (2009)] published Fri Oct 16, 2009.